CVD/ALD technology plays very important roles in forming nano-meter thin film and filling deep and narrow hole evenly. Applications are expanding in electronic product producing process such as FPD, LED, PV, etc. CVD/ALD process vaporizes precursor substances and undergoes chemical reactions to form metal film, oxidized metal film, nitrified metal film, etc. Hansol Chemical is producing various silicon and metal spheres used in CVD/ALD
Product name | Chemical name | Advantage |
---|---|---|
TSA | Trisilylamine | SiO2 Gap fill |
BDEAS | Bisdiethyl aminosilane | Low temp SiO2, Si seeding |
DIPAS | Diisopropylaminosilane | Low temp SiO2, Si seeding |
HCDS | Hexachlorodisilane | Spacer |
CpCo(CO)2 | Cyclopentadienyldicarbonylcobalt | Co capping layer |
High-k | Zirconium, Hafnium, Titanium, Aluminium precursors | High-k |
3DMAS | Tris dimethyl Amino silane | Slit SiO2, Tunneling SiO2 |
WCl5 | Tungsten Pentachloride | Solid W precursor for seeding |
Ruthenium | Ex0XRu Series | Liquid Ru precursor for ALD process |
Name | TEL | |
---|---|---|
Choi, YongHwan | +82-2-2152-2383 | yhchoi1@hansol.com |
LEE KYUNG SIK | +86-135-9044-8039 | kslee1@hansol.com |
Jung WonHyun | + 886-938-430-079 | whjung@hansol.com |
C.W Chung | + 886-912-881-655 | cwchung@hansol.com |
JAE HEE KIM | +82-2-2152-2372 | jhkim05@hansol.com |
Whee-Won Jin | +82-2-2152-2382 | hwjin@hansol.com |
Joo-Youn Lee | +82-2-2152-2309 | jy.lee8@hansol.com |
Ace | +82-2-2152-2382 | hkcho@hansol.com |
Flynn | +82-2-2152-2376 | hjlee01@hansol.com |
Sandy | +82-2-2152-2375 | hmkim1@hansol.com |
Sarah | +82-2-2152-2381 | symoon1@hansol.com |